Picosecond photoluminescence studies of carrier escape processes in a single quantum well

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Abstract
Time-resolved photoluminescence (TRPL), continuous-wave photoluminescence (PL) and photocurrent (PC) measurements have been performed on a single quantum well (SQW) embedded in a p - i - n diode and, by combining these measurements, unambiguous carrier escape times have been extracted as a function of perpendicular applied electric field and temperature. The experimental data are compared with a quantitative model based on the competition between escape and recombination lifetimes which includes direct tunnelling, thermally assisted tunnelling and thermionic emission processes and which has no free fitting parameters. Good agreement was found for the escape times with the radiative recombination rate being determined by the carriers with the faster escape rate and hence the lowest steady-state concentration. These are holes in this sample.