Turn-on process in high voltage 4H-SiC thyristors
- 1 February 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (2) , 241-243
- https://doi.org/10.1088/0268-1242/13/2/015
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Steady state current - voltage characteristics of 4H - SiC thyristors at high and superhigh current densitiesSemiconductor Science and Technology, 1997
- Temperature dependence of turn-on process in 4H-SiCthyristorsElectronics Letters, 1997
- A high-current and high-temperature 6H-SiC thyristorIEEE Electron Device Letters, 1996
- First SiC dynistorElectronics Letters, 1988