Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy
- 1 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (1) , 72-74
- https://doi.org/10.1063/1.102655
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Patterned quantum well semiconductor injection laser grown by molecular beam epitaxyApplied Physics Letters, 1988
- Morphology of GaAs and InP (001) Substrates after Different Preparation Procedures Prior to Epitaxial GrowthJournal of the Electrochemical Society, 1988
- Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substratesApplied Physics Letters, 1987
- Optical properties of GaInAs/AlInAs single quantum wellsApplied Physics Letters, 1983