1/f noise and percolation in impurity bands in inversion layers
- 14 December 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (23) , L923-L926
- https://doi.org/10.1088/0022-3719/11/23/006
Abstract
Current noise measurements on Si inversion layers in the region of the Na impurity band at 4.2K are presented. The measurements show that the observed 1/f noise is an intrinsic property of the hopping conduction and is not due to charge trapping as usually assumed. Na-related structure in the noise magnitude suggests that percolation effects can be important to hopping conduction.Keywords
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