Further measurements of random telegraph signals in proton irradiated CCDs
- 1 December 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 42 (6) , 2074-2081
- https://doi.org/10.1109/23.489255
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Experimental Evaluation Of High Speed Ccd Imager Radiation Effects Using Co60 And Proton RadiationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Sandbox CCDsPublished by SPIE-Intl Soc Optical Eng ,1995
- A model for charge transfer in buried-channel charge-coupled devices at low temperatureIEEE Transactions on Electron Devices, 1991
- Particle-induced spatial dark current fluctuations in focal plane arraysIEEE Transactions on Nuclear Science, 1990
- Proton-induced displacement damage distributions and extremes in silicon microvolumes charge injection deviceIEEE Transactions on Nuclear Science, 1990
- Displacement damage extremes in silicon depletion regionsIEEE Transactions on Nuclear Science, 1989
- Enhanced displacement damage effectiveness in irradiated silicon devicesIEEE Transactions on Nuclear Science, 1989
- Counting of deep-level traps using a charge-coupled deviceIEEE Transactions on Electron Devices, 1987
- Permanent Damage Produced by Single Proton Interactions in Silicon DevicesIEEE Transactions on Nuclear Science, 1986
- Electric field enhanced emission from non-Coulombic traps in semiconductorsJournal of Applied Physics, 1981