Enhanced displacement damage effectiveness in irradiated silicon devices
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (6) , 1825-1830
- https://doi.org/10.1109/23.45375
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Displacement damage extremes in silicon depletion regionsIEEE Transactions on Nuclear Science, 1989
- Proton damage effects in an EEV CCD imagerIEEE Transactions on Nuclear Science, 1989
- Circumvention of radiation-induced noise in CCD and CID imagersIEEE Transactions on Nuclear Science, 1989
- Counting of deep-level traps using a charge-coupled deviceIEEE Transactions on Electron Devices, 1987
- Radiation Effects on Video ImagersIEEE Transactions on Nuclear Science, 1986
- Characterization of dark current non-uniformities in charge-coupled devicesSolid-State Electronics, 1984
- Virtual phase technology: A new approach to fabrication of large-area CCD'sIEEE Transactions on Electron Devices, 1981
- Neutron Damage Mechanisms in Charge Transfer DevicesIEEE Transactions on Nuclear Science, 1978
- Energy Dependence of Neutron Damage in SiliconJournal of Applied Physics, 1967
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952