High-field drift velocity of holes in inversion layers on silicon
- 1 November 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (9) , 857-859
- https://doi.org/10.1063/1.93676
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High-field electron velocities in silicon surface inversion layersSurface Science, 1982
- High-field transport of holes in siliconApplied Physics Letters, 1981
- Measurement of the high-field drift velocity of electrons in inversion layers on siliconIEEE Electron Device Letters, 1981
- Velocity of surface carriers in inversion layers on siliconSolid-State Electronics, 1980
- Hole drift velocity in siliconPhysical Review B, 1975
- Hot carriers in silicon surface inversion layersJournal of Applied Physics, 1974