Hot-carrier degradation in bipolar transistors at 300 and 110 K-effect on BiCMOS inverter performance
- 1 April 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (4) , 1171-1173
- https://doi.org/10.1109/16.52460
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- High performance LSI process technology: SST CBi-CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Non-overlapping super self-aligned BiCMOS with 87 ps low power ECLPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- On the low-temperature static and dynamic properties of high-performance silicon bipolar transistorsIEEE Transactions on Electron Devices, 1989
- An advanced bipolar transistor with self-aligned ion-planted base and W/poly emitterIEEE Transactions on Electron Devices, 1988
- Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and designIEEE Transactions on Electron Devices, 1988
- 50-Å gate-Oxide MOSFET's at 77 KIEEE Transactions on Electron Devices, 1987
- Poly emitter bipolar hot carrier effects in an advanced BiCMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Submicrometer-channel CMOS for low-temperature operationIEEE Transactions on Electron Devices, 1987
- Performance and hot-carrier effects of small CRYO-CMOS devicesIEEE Transactions on Electron Devices, 1987
- Charge multiplication in silicon p-n junctionsSolid-State Electronics, 1963