Step-edge barriers on GaAs(001)
- 15 December 1993
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (23) , 17603-17606
- https://doi.org/10.1103/physrevb.48.17603
Abstract
We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high-energy electron-diffraction specular intensity measured near in-phase diffraction conditions and the surface step density obtained from simulations of a solid-on-solid model. Only by including a barrier to interlayer transport and a short-range incorporation process of freshly deposited atoms can the simulations be brought into agreement with the measurements both during growth and during post-growth equilibration of the surface.Keywords
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This publication has 26 references indexed in Scilit:
- Accommodation and diffusion of Cu deposited on flat and stepped Cu(111) surfacesPhysical Review B, 1993
- Reentrant layer-by-layer growth: A numerical studyPhysical Review B, 1993
- Transition from two to three dimensions in homoepitaxial thin-film growth: The effect of a repulsive barrier at descending stepsPhysical Review B, 1992
- Growth of Cu on Cu(100)Surface Science, 1992
- Factors mediating smoothness in epitaxial thin-film growthPhysical Review B, 1991
- Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)Physical Review Letters, 1990
- Dynamic scaling and phase transitions in interface growthPhysica A: Statistical Mechanics and its Applications, 1990
- Low-temperature epitaxial growth of thin metal filmsPhysical Review B, 1990
- Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 KPhysical Review Letters, 1989
- Intensity oscillations in reflection high-energy electron diffraction during molecular beam epitaxy of Ni on W(110)Applied Physics Letters, 1987