High-performance fully depleted silicon-on-insulator transistors
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (6) , 1444-1451
- https://doi.org/10.1109/16.106239
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Theory and Implementation of a Multilayer Ellipsometric ModelJournal of the Electrochemical Society, 1988
- Hot-electron effects in Silicon-on-insulator n-channel MOSFET'sIEEE Transactions on Electron Devices, 1987
- Measurement and modeling of circuit speed of CMOS on oxygen-implanted SOIIEEE Transactions on Electron Devices, 1987
- Formation of self-aligned TiSi2 for very large scale integrated contacts and interconnectsJournal of Vacuum Science & Technology A, 1987
- High-performance SOI-CMOS Transistors in oxygen-implanted silicon without epitaxyIEEE Electron Device Letters, 1987
- Mechanisms of buried oxide formation by ion implantationApplied Physics Letters, 1987
- High performance SOIMOSFET using ultra-thin SOI filmPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Buried Oxide Soi: Materials, Devices, and VLSI CircuitsMRS Proceedings, 1987
- Reduction of floating substrate effect in thin-film SOI MOSFETsElectronics Letters, 1986
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978