A Comparison of Radiation Damage in Linear ICs from COBALT-60 Gamma Rays and 2.2 MeV Electrons
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4192-4196
- https://doi.org/10.1109/tns.1983.4333107
Abstract
The total ionizing dose response of fourteen IC types from eight manufacturers have been measured using Co-60 gamma rays and 2.2 MeV electrons for exposure levels of 100 to 20,000 Gy(Si). Key parameter measurements were made and compared for each device type. The data show that a Co-60 source may not be a suitable simulation source for some systems, because of the generally more damaging nature of electrons as well as the unpredictable nature of the individual device response to the two types of radiations used here.Keywords
This publication has 6 references indexed in Scilit:
- Radiation Effects on MOS Devices: Dosimetry, Annealing, Irradiation Sequence, and SourcesIEEE Transactions on Nuclear Science, 1983
- The Damage Equivalence of Electrons, Protons, and Gamma Rays in MOS DevicesIEEE Transactions on Nuclear Science, 1982
- A Comparison of Radiation Damage in Transistors from Cobalt-60 Gamma Rays and 2.2 MeV ElectronsIEEE Transactions on Nuclear Science, 1982
- Total-dose radiation-effects data for semiconductor devices. Vol. 1Published by Office of Scientific and Technical Information (OSTI) ,1981
- SEM Analysis of Ionizing Radiation Effects in an Analog to Digital Converter (AD571)IEEE Transactions on Nuclear Science, 1981
- SEM Analysis of Ionizing Radiation Effects in Linear Integrated CircuitsIEEE Transactions on Nuclear Science, 1977