Interface state behaviour of plasma grown oxides following low temperature annealing
- 1 October 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 39 (1-4) , 374-380
- https://doi.org/10.1016/0169-4332(89)90453-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Low-temperature annealing and hydrogenation of defects at the Si–SiO2 interfaceJournal of Vacuum Science and Technology, 1981
- Effects of RF annealing on the excess charge centers in MIS dielectricsIEEE Journal of Solid-State Circuits, 1978
- An investigation of the influence of low-temperature annealing treatments on the interface state density at the Si-SiO2Journal of Physics D: Applied Physics, 1975