New Ge substrate cleaning method for Si Ge C MOMBE growth
- 1 February 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 294 (1-2) , 153-156
- https://doi.org/10.1016/s0040-6090(96)09258-9
Abstract
No abstract availableKeywords
Funding Information
- Japan Society for the Promotion of Science
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 8 references indexed in Scilit:
- An efficient method for cleaning Ge(100) surfaceSurface Science, 1994
- Strain compensated heterostructures in the Si1−x−yGexCy ternary systemJournal of Vacuum Science & Technology A, 1994
- Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogenApplied Physics Letters, 1994
- Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaningJournal of Vacuum Science & Technology A, 1993
- Epitaxial Si films on Ge(100) grown via H/Cl exchangeApplied Physics Letters, 1993
- Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy systemApplied Physics Letters, 1992
- Optical band gap of the ternary semiconductor Si1−x−yGexCyJournal of Applied Physics, 1991
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986