Epitaxial Si films on Ge(100) grown via H/Cl exchange
- 1 February 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (5) , 510-512
- https://doi.org/10.1063/1.108895
Abstract
Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl6, maintaining chlorine and hydrogen surface termination. At 465 °C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475 °C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.Keywords
This publication has 12 references indexed in Scilit:
- Observation of reflection high energy electron diffraction intensity oscillations during Si molecular beam epitaxial growth from disilaneApplied Physics Letters, 1992
- Hydrogen coverage during Si growth from SiH4 and Si2H6Applied Physics Letters, 1992
- Mechanisms and kinetics of Si atomic-layer epitaxy on Si(001)2×1 from Si2H6Journal of Vacuum Science & Technology A, 1991
- Kinetics of surface reactions in very low-pressure chemical vapor deposition of Si from SiH4Applied Physics Letters, 1991
- Self-Limiting Adsorption of SiCl2H2 and Its Application to the Layer-by-Layer Photochemical ProcessJapanese Journal of Applied Physics, 1991
- Influence of surfactants in Ge and Si epitaxy on Si(001)Physical Review B, 1990
- Silicon Molecular Layer EpitaxyJournal of the Electrochemical Society, 1990
- Heteroepitaxy of Si films on a Ge(100)-2×1 surfaceJournal of Applied Physics, 1989
- Thin epitaxial Ge−Si(111) films: Study and control of morphologySurface Science, 1987
- Atomic layer epitaxyJournal of Applied Physics, 1986