Electron beam lithography patterning of sub-10nm line using hydrogen silsesquioxane for nanoscale device applications
- 1 November 2005
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 23 (6) , 3120-3123
- https://doi.org/10.1116/1.2132328
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Plasma doping technology for fabrication of nanoscale metal-oxide-semiconductor devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004
- Sub-10-nm-Scale Lithography Usingp-chloromethyl-methoxy-calix[4]arene ResistJapanese Journal of Applied Physics, 2003
- Hydrogen SilsesQuioxane, a high-resolution negative tone e-beam resist, investigated for its applicability in photon-based lithographiesMicroelectronic Engineering, 2002
- FinFET-a self-aligned double-gate MOSFET scalable to 20 nmIEEE Transactions on Electron Devices, 2000
- Supercritical drying for water-rinsed resist systemsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Resolution limit of negative tone chemically amplified resist used for hybrid lithography: Influence of the molecular weightJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000