FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
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- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (12) , 2320-2325
- https://doi.org/10.1109/16.887014
Abstract
MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si/sub 0.4/Ge/sub 0.6/ as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily using the conventional planar MOSFET process technologies.Keywords
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