Positron study of vacancy defects in proton and neutron irradiated GaP, InP, and Si
- 16 March 1988
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 106 (1) , 81-88
- https://doi.org/10.1002/pssa.2211060111
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Positron study of native vacancies in doped and undoped GaAsJournal of Physics C: Solid State Physics, 1986
- Positron annihilation studies in alpha-irradiated n-type GaPPhysics Letters A, 1985
- High energy ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Investigation of defects in gallium arsenide using positron annihilationPhysical Review B, 1984
- The electrical characteristics of ion implanted compound semiconductorsNuclear Instruments and Methods, 1981
- Positrons in SolidsPublished by Springer Nature ,1979
- Proton-implanted GaP optical waveguideJournal of Applied Physics, 1973
- Optical waveguiding in proton-implanted GaAsApplied Physics Letters, 1972
- Radiation damage by implanted ions in GaAs and GaPRadiation Effects, 1970
- Data Transfers and Demand Handling in Multicrate CAMAC SystemsIEEE Transactions on Nuclear Science, 1970