Growth Mode and Interface Structure of MBE Grown SiGe Structures
- 1 January 1986
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- High Speed Integrated Circuit Using Silicon Molecular Beam Epitaxy (Si‐MBE)Journal of the Electrochemical Society, 1985
- Secondary implantation of Sb into Si molecular beam epitaxy layersApplied Physics Letters, 1985
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- Growth kinetics of Si-molecular beam epitaxyApplied Physics A, 1982
- Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substratesThin Solid Films, 1977
- A one-dimensional SiGe superlattice grown by UHV epitaxyApplied Physics A, 1975
- Structure and shape of epitaxial overgrowthsJournal of Crystal Growth, 1975
- Effect of coherency strain and misfit dislocations on the mode of growth of thin filmsThin Solid Films, 1975
- Small epitaxial islands Part II: On the significance of dislocations, island size and misfit on contact anglesThin Solid Films, 1974
- Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structureApplied Physics A, 1974