Modeling laser-induced diffusion of implanted arsenic in silicon
- 1 October 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (10) , 6552-6555
- https://doi.org/10.1063/1.325716
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- A computer simulation of laser annealing silicon at 1.06 μmApplied Physics Letters, 1979
- Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed siliconApplied Physics Letters, 1978
- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978
- Arsenic diffusion in silicon melted by high-power nanosecond laser pulsingApplied Physics Letters, 1978
- Periodic regrowth phenomena produced by laser annealing of ion-implanted siliconApplied Physics Letters, 1978
- Investigation of laser induced diffusion and annealing processes of arsenic-implanted silicon crystalsPhysica Status Solidi (a), 1977
- Atom movements occurring at solid metal-semiconductor interfacesJournal of Vacuum Science and Technology, 1974
- Dense-Gas Formulation of Self-Diffusion of Liquid MetalsPhysical Review B, 1968
- Velocity Autocorrelations for Hard SpheresPhysical Review Letters, 1967
- Melting of a half-space subjected to a constant heat inputJournal of the Franklin Institute, 1967