Accurate determination of heterojunction band discontinuities in the presence of interface traps using capacitance-voltage techniques

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Abstract
The effects that interface traps have on the determination of the heterojunction band discontinuity energies ΔEc measured via capacitance‐voltage analysis are considered. We show that both the trap density σiK and conduction‐band discontinuity energy ΔEcK measured using the method of Kroemer, Chien, Harris, and Edwall [Appl. Phys. Lett. 3 6, 295 (1980)] are functions of the heterointerface width d, the difference between the actual and the measured heterojunction positions Δxj, and the doping levels of the two contacting materials. These error sources can be corrected by using simple amended equations developed in this study. This amended technique improves the measurement accuracy of both trap density and heterojunction band discontinuity energy, is easy to use, and is relatively insensitive to variations in doping and trap density in the interface region. This technique is applied to the analysis of a vapor phase epitaxial N‐n InP/In0.53 Ga0.47 As heterojunction for which we find ΔEc =(0.24±0.01) eV.

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