Photoluminescence spectra of undoped GaAs grown by molecular-beam epitaxy at very high and low substrate temperatures
- 1 February 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (3) , 888-891
- https://doi.org/10.1063/1.336559
Abstract
The incorporation mechanisms of residual impurities in GaAs layers grown by molecular-beam epitaxy has been investigated by high-resolution photoluminescence (PL) spectroscopy at 2 K. A systematic study of near-band-edge emissions of undoped GaAs layers grown at a wide range of growth temperatures (Tg), 470–750 °C, demonstrates that PL spectra related with residual impurities are significantly dependent upon Tg. It was found that maximum emission intensity of free exciton is obtained at Tg ∼550 °C, and the minimum impurity incorporation is established at Tg of 550–650 °C.This publication has 10 references indexed in Scilit:
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