Quantitative electron channeling measurement of ion implantation damage in aluminum
- 1 June 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 16 (2-3) , 143-147
- https://doi.org/10.1016/0168-583x(86)90005-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- An assessment of ion implantation damage using the scanning electron microscopeRadiation Effects, 1975
- Depth distribution of energy deposition by ion bombardmentComputer Physics Communications, 1974
- MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPEApplied Physics Letters, 1970
- Damage produced by ion mplantation in siliconRadiation Effects, 1970