Performance and reliability aspects of FOND: a new deep submicron CMOS device concept

This publication has 5 references indexed in Scilit:

• FOND (Fully Overlapped Nitride-etch defined Device): a new device architecture for high-reliability and high-performance deep submicron CMOS technology
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Gate-capacitance characteristics of deep-submicron LATID (large-angle-tilt implanted drain) MOSFETs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1994
• Deep-submicrometer large-angle-tilt implanted drain (LATID) technology
  IEEE Transactions on Electron Devices, 1992
• Impact of the gate-drain overlapped device (GOLD) for deep submicrometer VLSI
  IEEE Transactions on Electron Devices, 1988