Gate-capacitance characteristics of deep-submicron LATID (large-angle-tilt implanted drain) MOSFETs

This publication has 4 references indexed in Scilit:

• Effects of ion implantation on deep-submicrometer, drain-engineered MOSFET technologies
  IEEE Transactions on Electron Devices, 1991
• Drain-structure design for reduced band-to-band and band-to-defect tunneling leakage
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990
• Poly-gate sidewall oxidation induced submicrometer MOSFET degradation
  IEEE Electron Device Letters, 1989
• Velocity saturation effect on short-channel MOS transistor capacitance
  IEEE Electron Device Letters, 1985