Poly-gate sidewall oxidation induced submicrometer MOSFET degradation
- 1 August 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (8) , 367-369
- https://doi.org/10.1109/55.31759
Abstract
The effect of poly-gate sidewall oxidation on short-channel MOSFET behavior is examined. The gain, threshold voltage, and apparent electrical channel length are shown to be very sensitive to the location of the n/sup -/ junction edge with respect to the poly-gate edge for a lightly-doped-drain NMOS transistor. New guidelines for the design of submicrometer MOSFETs based on an analysis of the sidewall oxidation of the polysilicon after gate definition are proposed.Keywords
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