Twin-MOSFET structure for suppression of kink and parasitic bipolar effects in SOI MOSFETs at room and liquid helium temperatures
- 30 April 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (4) , 505-512
- https://doi.org/10.1016/0038-1101(92)90112-p
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Threshold voltage instability at low temperatures in partially depleted thin-film SOI MOSFETsIEEE Electron Device Letters, 1991
- Modes of operation and radiation sensitivity of ultrathin SOI transistorsIEEE Transactions on Electron Devices, 1990
- Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETsIEEE Transactions on Electron Devices, 1990
- Operation of SOI CMOS devices at liquid-nitrogen temperatureIEEE Electron Device Letters, 1990
- Analysis of drain breakdown voltage in SOI n -channel MOSFETsElectronics Letters, 1989
- Model for hysteresis and kink behavior of MOS transistors operating at 4.2 KIEEE Transactions on Electron Devices, 1988
- Reduction of kink effect in thin-film SOI MOSFETsIEEE Electron Device Letters, 1988
- Simplified analysis of body-contact effect for MOSFET/SOIIEEE Transactions on Electron Devices, 1988
- CMOS circuits made in thin SIMOX filmsElectronics Letters, 1987
- High-voltage SOS/MOS devices and circuit elements: Design, fabrication, and performanceIEEE Journal of Solid-State Circuits, 1976