Operation of SOI CMOS devices at liquid-nitrogen temperature
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (3) , 126-128
- https://doi.org/10.1109/55.46955
Abstract
Liquid-nitrogen-temperature (LNT) operation of silicon-on-insulator (SOI) CMOS devices has been investigated experimentally. The maximum carrier mobilities in these devices increase by factors from 1.25 to 4.5 between room temperature and LNT. At LNT, the increase in depletion-layer width and the resulting threshold-voltage increase are limited by the silicon film thickness. For SOI devices with a body contact, the series resistance between channel and body contact increases at lower temperature, resulting in a current kink in saturation I-V characteristics.Keywords
This publication has 5 references indexed in Scilit:
- A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operationIEEE Transactions on Electron Devices, 1987
- Reduction of floating substrate effect in thin-film SOI MOSFETsElectronics Letters, 1986
- Low temperature CMOS devices and technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Reliability in submicron MOSFETs stressed at 77 KPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Very small MOSFET's for low-temperature operationIEEE Transactions on Electron Devices, 1977