Microstructural characterization of solid-phase crystallized amorphous silicon films recrystallized using an excimer laser
- 10 February 1997
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (6) , 767-769
- https://doi.org/10.1063/1.118254
Abstract
The laser recrystallization of amorphous-silicon films crystallized in a furnace is investigated for single and multipulse laser irradiation. The resulting microstructure is grouped into three regimes, based on their recrystallization mechanism. For the low energy irradiation regime, the grain size in unchanged, however many intragrain defects are removed, while the high energy regime results in homogeneous nucleation of the molten film. A third regime exists between these two, characterized by large lateral grain growth. Except for the low energy regime, we conclude that the results obtained are consistent with those found for the direct laser crystallization of amorphous silicon films.Keywords
This publication has 11 references indexed in Scilit:
- Low temperature polysilicon TFTs: a comparison of solid phase and laser crystallizationMicroelectronic Engineering, 1995
- Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealingApplied Physics Letters, 1995
- Grain growth in laser dehydrogenated and crystallized polycrystalline silicon for thin film transistorsJournal of Applied Physics, 1994
- On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si filmsApplied Physics Letters, 1994
- Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon filmsApplied Physics Letters, 1993
- An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabricationMicroelectronic Engineering, 1993
- Excimer-laser-annealed poly-Si thin-film transistorsIEEE Transactions on Electron Devices, 1993
- Large Grain Creation and Destruction in Excimer Laser Crystallized Amorphous SiliconMRS Proceedings, 1993
- Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si FilmsMRS Proceedings, 1993
- High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon filmsIEEE Electron Device Letters, 1987