Interaction of Pd–Er alloys with silicon
- 1 August 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (8) , 4614-4622
- https://doi.org/10.1063/1.332617
Abstract
I n situ resistivity measurements together with MeV 4He+ backscattering, x-ray diffraction, barrier height measurements, and Auger electron spectroscopy combined with Ar sputtering have been used to investigate the interaction of silicon with alloys of rare-earth and near-noble metals with annealing at temperatures up to 650 °C. Alloys of Pd–Er with three different compositions have been prepared by dual electron-gun coevaporation on both n- and p-type silicon and Pd/Er bilayers have been deposited on SiO2. The results show that as-deposited these alloys are amorphous and the initial stages of the reaction with silicon upon annealing is controlled by the metal–metal interaction as well as the metal–silicon interaction. The Er-rich alloy (Pd15Er85) segregates Er to the silicon interface and forms Pd2Er5. The segregated Er reacts with silicon producing ErSi2. For the Pd-rich alloy (Pd65Er35) the excess Pd is segregated at the silicon surface forming Pd2Si. The near 50-50 alloy forms PdEr and a slightly higher temperature is necessary to promote the reaction with silicon to form the silicide of the excess component.This publication has 12 references indexed in Scilit:
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