Analytic Charge Model for Surrounding-Gate MOSFETs
- 17 April 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 54 (3) , 492-496
- https://doi.org/10.1109/ted.2006.890264
Abstract
This paper presents an analytic charge model for surrounding-gate MOSFETs. Without the charge sheet approximation, the model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. It continuously covers all the operation regions, i.e., linear, saturation, and subthreshold, with unique analytic expressions. The physics-based nature makes this model free of fitting parameters and hence predictive. In addition, it is inherently not source-referenced to avoid asymmetries. It is shown that the current-voltage characteristics generated by this model agree with the numerical simulation resultsKeywords
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