Analysis of charge-collection efficiency measurements in Schottky diodes
- 1 November 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (11) , 1587-1594
- https://doi.org/10.1016/0038-1101(88)90005-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Hole diffusion length investigation by photon and electron excitation of GaAs Schottky barriersJournal of Applied Physics, 1986
- Comparison of EBIC and DLTS Measurements on Boron-Doped CZ Silicon Contaminated with IronPhysica Status Solidi (a), 1986
- Problems and results of diffusion length investigations by energy-dependent EBIC measurementsCrystal Research and Technology, 1985
- Evaluation of diffusion length and surface-recombination velocity from a planar-collector-geometry electron-beam-induced current scanJournal of Applied Physics, 1985
- Determination of Semiconductor Parameters and of the Vertical Structure of Devices by Numerical Analysis of Energy-Dependent EBIC MeasurementsPhysica Status Solidi (a), 1983
- Charge collection scanning electron microscopyJournal of Applied Physics, 1982
- A SEM-EBIC minority-carrier diffusion-length measurement techniqueIEEE Transactions on Electron Devices, 1982
- Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriersJournal of Applied Physics, 1978
- Theory of life time measurements with the scanning electron microscope: Steady stateSolid-State Electronics, 1976
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971