Raman scattering analysis of disorder in heterogeneous (GaAs)1−x(SiC2:H)x films grown by metal-organic chemical vapour deposition
- 1 December 1987
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 155 (2) , 331-342
- https://doi.org/10.1016/0040-6090(87)90078-2
Abstract
No abstract availableKeywords
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