Metal-organic chemical vapour codeposition of GaAs and SixC1−x groups: Growth of a new amorphous semiconductor
- 1 July 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 117 (4) , 299-309
- https://doi.org/10.1016/0040-6090(84)90360-2
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Photoluminescence et propriétés optiques d'alliages Si x C1-x amorphes préparés par depôt chimique en phase vapeurPhilosophical Magazine Part B, 1984
- X-ray photoelectron spectroscopy and Raman spectroscopy investigations of amorphous SixC1x(H) coatings obtained by chemical vapour deposition from thermally labile organosilicon compoundsThin Solid Films, 1983
- Plasma deposition of GaAsThin Solid Films, 1982
- Various chemical mechanisms for the crystal growth of III–V semiconductors using coordination compounds as starting material in the MOCVD processJournal of Crystal Growth, 1981
- Disorder effects and the optical properties of amorphous GaAs and GaPPhilosophical Magazine Part B, 1981
- Ti(C, N, H) coatings on glass substrates prepared by chemical vapour deposition using tris(2,2′-bipyridine)titanium(0)Thin Solid Films, 1981
- Vibrational properties of hydrogenated amorphous GaAsJournal of Non-Crystalline Solids, 1980
- Croissance cristalline d'arséniure de gallium par dépoˆt chimique en phase vapeurápartir du complexe monochlorodiéthylgallium-triéthylarsineJournal of Crystal Growth, 1979
- EXAFS of amorphous GaAs: evidence for inequivalent environments of Ga and AsJournal of Physics C: Solid State Physics, 1978
- Modeling the structure of amorphous tetrahedrally coordinated semiconductors. IPhysical Review B, 1974