Reply to ‘‘Comment on ‘Heterojunction valence-band-discontinuity dependence on face orientation’ ’’
- 15 March 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (9) , 4803-4804
- https://doi.org/10.1103/physrevb.37.4803
Abstract
We respond to the criticisms of Van de Walle and Martin in the preceding Comment and present new calculations of the valence-band offsets.Keywords
This publication has 5 references indexed in Scilit:
- Comment on ‘‘Heterojunction valence-band-discontinuity dependence on face orientation’’Physical Review B, 1988
- Heterojunction band offsets and the interface dielectric functionPhysical Review B, 1987
- Heterojunction valence-band-discontinuity dependence on face orientationPhysical Review B, 1987
- Band discontinuities for the (110)-interfaces of semiconductor heterojunctionsSurface Science, 1987
- On the formation of semiconductor interfacesJournal of Physics C: Solid State Physics, 1987