Initial stages of epitaxial semiconductor-insulator heterointerface formation
- 31 December 1990
- journal article
- Published by Elsevier in Journal of Electron Spectroscopy and Related Phenomena
- Vol. 51, 599-612
- https://doi.org/10.1016/0368-2048(90)80184-c
Abstract
No abstract availableKeywords
This publication has 42 references indexed in Scilit:
- Lattice-Matched Gaas/Ca0.45Sr0.55F2/Ge(100) Heterostrucuures Grown By Molecular Beam EpitaxyMRS Proceedings, 1987
- Heteroepitaxy of insulator/metal/silicon structures: CaF2/NiSi2/Si(111) and CaF2/CoSi2/Si(111)Applied Physics Letters, 1986
- Lattice matching at elevated substrate temperature for growth of GaAs films with good electrical properties on CaxSr1−xF2/GaAs(100) structuresApplied Physics Letters, 1986
- Growth of an epitaxial insulator-metal-semiconductor structure on Si by molecular beam epitaxyApplied Physics Letters, 1986
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2 and GaAsJapanese Journal of Applied Physics, 1986
- Nanometer scale electron beam lithography in inorganic materialsApplied Physics Letters, 1984
- GaAs/(Ca,Sr)F2/(001) GaAs lattice-matched structures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Cleavage surface energy of the ((111)) plane of strontium fluorideJournal of Applied Physics, 1974
- Surface Energy of Germanium and SiliconJournal of the Electrochemical Society, 1963
- Direct Measurements of the Surface Energies of CrystalsJournal of Applied Physics, 1960