Anodization of aluminum to inhibit hillock growth during high temperature processing
- 1 November 1971
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 8 (5) , R47-R50
- https://doi.org/10.1016/0040-6090(71)90088-5
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Hillock-free aluminum thin films for electronic devicesMetallurgical Transactions, 1971
- Advantages of vapor-plated phosphosilicate films in large-scale integrated circuit arraysIEEE Transactions on Electron Devices, 1970
- Electromigration—A brief survey and some recent resultsIEEE Transactions on Electron Devices, 1969
- Hillock Growth and Stress Relief in Sputtered Au FilmsJournal of Applied Physics, 1969
- Thermal Cycling and Surface Reconstruction in Aluminum Thin FilmsJournal of the Electrochemical Society, 1969
- Microscopic Rates of Growth in Single Crystals Pulled from the Melt: Indium AntimonideJournal of the Electrochemical Society, 1968