Structural and Electrical Properties of Crystalline TiO2 Thin Films Formed by Metalorganic Decomposition
- 1 October 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (10R) , 6034-6038
- https://doi.org/10.1143/jjap.38.6034
Abstract
Titanium oxide (TiO2) thin films were formed on a Si substrate by metalorganic decomposition at temperatures ranging from 600°C to 1000°C. As-deposited films were in the amorphous state and were completely transformed after annealing at 600°C to a crystalline structure with anatase as its main component. During crystallization in oxygen atomosphere, a reaction between TiO2 and Si occurred at the interface, which resulted in the formation of a thin interfacial SiO2 layer. Capacitance-voltage measurement showed good dielectric properties with a maximum dielectric constant of 76 for films annealed at 700°C. For the crystallized TiO2 films, the interface trap density was 1×1011 cm-2eV-1, and the leakage current was 1×10-8 A/cm2 at 0.2 MV/cm. The modified structure of TiO2/SiO2/Si is expected to be suitable for the dielectric layer in an integrated circuit in place of SiO2 or Si3N4 films.Keywords
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