Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions
- 9 May 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (20) , 202101
- https://doi.org/10.1063/1.1925320
Abstract
We demonstrate a method for the controlled implantation of single ions into a silicon substrate with energy of sub- 20 ‐ keV . The method is based on the collection of electron-hole pairs generated in the substrate by the impact of a single ion. We have used the method to implant single 14 ‐ keV P 31 ions through nanoscale masks into silicon as a route to the fabrication of devices based on single donors in silicon.Keywords
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