Low-threshold quasi-cw type-II quantum well lasers at wavelengths beyond 4 μm
- 1 December 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (22) , 3281-3283
- https://doi.org/10.1063/1.120313
Abstract
Optically pumped InAs/InGaSb/InAs/AlSb type-II quantum well lasers emitting from 4.1 to 4.36 μm were operated up to 226 K with a characteristic temperature of 30 K. The absorbed threshold pump intensity at 0.98 μm was at 100 K, and at 200 K with a pulse length of 5 μs and a repetition rate of 2 kHz. At 73 K, the peak output power was 250 mW per facet with a pulse length of 10 μs and a repetition rate of 10 kHz. A cw output power of 14.7 mW was observed at 74 K.
Keywords
This publication has 11 references indexed in Scilit:
- MBE grown mid-infrared type-II quantum-well lasersJournal of Crystal Growth, 1997
- Turn-key, liquid-nitrogen-cooled 3.9 µm semiconductorlaser package with 0.2 W CW outputElectronics Letters, 1996
- Type II mid-IR lasers operating above room temperatureElectronics Letters, 1996
- 175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μmApplied Physics Letters, 1996
- Room-temperature 2.78 μm AlGaAsSb/InGaAsSb quantum-well lasersApplied Physics Letters, 1995
- High-efficiency, high-temperature mid-infrared (λ≥ 4 µm)InAsSb/GaSb lasersElectronics Letters, 1994
- Auger lifetime enhancement in InAs–Ga1−xInxSb superlatticesApplied Physics Letters, 1994
- High-power diode-laser-pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μmApplied Physics Letters, 1994
- High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 /spl mu/mIEEE Photonics Technology Letters, 1994
- Diode-laser-pumped InGaAs/GaAs/AlGaAs heterostructure lasers with low internal loss and 4-W average powerApplied Physics Letters, 1993