High-speed flip-chip InP/InGaAs avalanche photodiodes with ultralow capacitance and large gain-bandwidth products
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (12) , 1115-1116
- https://doi.org/10.1109/68.118025
Abstract
Planar InP/InGaAs avalanche photodiodes (APDs) have been fabricated by adopting a flip-chart configuration and a monolithic lens structure. These APDs exhibit an ultralow capacitance of 70 fF, a quantum efficiency of 80%, a wide bandwidth of 7 GHz, and a large gain-bandwidth product of 80 GHz.Keywords
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