Planar InP-InGaAs avalanche photodetectors with n-multiplication layer exhibiting a very high gain-bandwidth product
- 1 September 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (9) , 643-646
- https://doi.org/10.1109/68.59337
Abstract
A planar separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) structure was designed and fabricated, allowing for an updoped multiplication layer without the use of guard rings. A very high gain-bandwidth (GBW) product of 93 GHz and DC gains exceeding 1000 have been measured for a 30- mu m-diameter device. This GBW is, to the author's knowledge, the highest reported to date in any III-V APD. In principle, the useful gain-bandwidth product of SAGCM structures is not limited by the tunneling limit in the InP avalanche region of 140 GHz for conventional separate absorption, grading, and multiplication (SAGM) structures.Keywords
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