Shot Noise in Platinum-Gallium Arsenide Schottky Barrier Diodes
- 1 April 1971
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (5) , 1886-1891
- https://doi.org/10.1063/1.1660463
Abstract
The high-frequency shot noise of Pt–GaAs Schottky barrier diodes has been measured at 60 MHz for both guard-ring and non-guard-ring structures. The measured equivalent noise temperature agrees well with the shot-noise theory of semiconductor junctions at relatively high forward currents where the metal-semiconductor interface effects can be neglected. At low levels of forward bias the measured noise is greater than that predicted by conventional theory. A measured excess-leakage conductance showing full thermal noise is added to the model and accounts for part of the difference between theory and experiment. The requirements for low-noise diodes are outlined.This publication has 12 references indexed in Scilit:
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