Reliability of Semiconductor Lasers and Detectors for Undersea Transmission Systems
- 1 November 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal on Selected Areas in Communications
- Vol. 2 (6) , 985-991
- https://doi.org/10.1109/jsac.1984.1146144
Abstract
This paper reports the strategy for establishing the reliability assurance for LD's and APD's available for undersea transmission systems. On the basis of aging data during more than 104h and a statistical analysis for the reliability of semiconductor devices, the LD's and Ge-APD's lifetest plans for high reliability assurance are proposed.Keywords
This publication has 13 references indexed in Scilit:
- Failure Modes of InGaAsP/InP Lasers Due to AdhesivesIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1984
- Screening method for laser diodes with high reliabilityElectronics Letters, 1984
- Some aspects of bonding-solder deterioration observed in long-lived semiconductor lasers: Solder migration and whisker growthJournal of Applied Physics, 1984
- Reliability in InGaAsP/InP buried heterostructure 1.3 µm lasersIEEE Journal of Quantum Electronics, 1983
- Thermally accelerated degradation of 1.3 μm BH lasersElectronics Letters, 1983
- Stress tests on 1.3 μm buried-heterostructure laser diodeElectronics Letters, 1983
- InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinementJournal of Lightwave Technology, 1983
- Reliability of power GaAs field-effect transistorsIEEE Transactions on Electron Devices, 1982
- Transverse mode stabilized InGaAsP/InP (λ = 1.3 µm) piano-convex waveguide lasersIEEE Journal of Quantum Electronics, 1981
- Oscillation characteristics in InGaAsP/InP DH lasers with self-aligned structureIEEE Journal of Quantum Electronics, 1979