Ablation of GaAs by Intense, Ultrafast Electronic Excitation from Highly Charged Ions
- 21 September 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 81 (12) , 2590-2593
- https://doi.org/10.1103/physrevlett.81.2590
Abstract
We have measured total ablation rates and secondary ion yields from undoped GaAs(100) interacting with slow , very highly charged ions. Ablation rates increase strongly as a function of projectile charge. Some 1400 target atoms are removed when a single ion deposits a potential energy of 152.6 keV within a few femtoseconds into a nanometer-sized target volume. We discuss models for ablation of semiconductors by intense, ultrafast electronic excitation.
Keywords
This publication has 33 references indexed in Scilit:
- Non-kinetic damage on insulating materials by highly charged ion bombardmentNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
- Charge State Dependent Energy Loss of Slow Heavy Ions in SolidsPhysical Review Letters, 1997
- Potential Sputtering of Cleanby Slow Highly Charged IonsPhysical Review Letters, 1997
- Electronic Sputtering and Desorption Effects in TOF-SIMS Studies Using Slow Highly Charged Ions like Au69+Materials Science Forum, 1997
- Emission of secondary particles from metals and insulators at impact of slow highly charged ionsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997
- Sputter yields of insulators bombarded with hyperthermal multiply charged ionsPhysica Scripta, 1997
- Desorption induced by electronic potential energy of multiply charged ionsSurface Science, 1996
- Investigations of the interactions of highest charge state ions with surfacesPhysica Scripta, 1996
- Desorption of Ga and As Atoms from GaAs Surface Induced by Slow Multiply Charged Ar IonsJapanese Journal of Applied Physics, 1995
- Atomic displacement due to the electrostatic potential energy of very highly charged ions at solid surfacesSurface Science, 1993