The distinction of several different kinds of oxygen donors in silicon
- 16 July 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 66 (1) , 277-282
- https://doi.org/10.1002/pssa.2210660134
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- The effects of heat treatment on dislocation-free oxygen-containing silicon crystalsJournal of Applied Physics, 1977
- Anomalous resistivity profiles in long silicon crystals grown by the Czochralski methodJournal of Crystal Growth, 1973
- The effect of carbon on thermal donor formation in heat treated pulled silicon crystalsJournal of Physics and Chemistry of Solids, 1972
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Interactions between Oxygen and Acceptor Elements in SiliconJournal of Applied Physics, 1958
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957
- Resistivity changes in silicon single crystals induced by heat treatmentActa Metallurgica, 1955
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954