Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates
- 27 April 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 212 (3-4) , 397-401
- https://doi.org/10.1016/s0022-0248(99)00895-7
Abstract
No abstract availableKeywords
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