Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
- 1 July 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (7B) , L873
- https://doi.org/10.1143/jjap.35.l873
Abstract
Hexagonal GaN ( h-GaN) films are grown on GaAs (100) vicinal substrates by hydride vapor phase epitaxy. The substrate misorientation dependence of the crystal structure is investigated by X-ray diffraction measurements using a 4-circle diffractometer. It is found that misorientation toward the B direction is essential for the growth of single domain h-GaN films and that the c-axis of the single domain h-GaN orients to the GaAs B direction.Keywords
This publication has 9 references indexed in Scilit:
- Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxyPhysical Review B, 1995
- New Epitaxial Growth Method of Cubic GaN on (100) GaAs Using (CH3)3Ga, HCl and NH3Japanese Journal of Applied Physics, 1995
- Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substratesApplied Physics Letters, 1994
- Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1994
- MOVPE growth of cubic GaN on GaAs using dimethylhydrazineJournal of Crystal Growth, 1992
- Epitaxial growth and characterization of zinc-blende gallium nitride on (001) siliconJournal of Applied Physics, 1992
- Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxyApplied Physics Letters, 1991
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and HydrazineJapanese Journal of Applied Physics, 1986
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969