TiO2 Thin Films Formed by Electron Cyclotron Resonance Plasma Oxidation of Ti Thin Films
- 1 August 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (8B) , L1167
- https://doi.org/10.1143/jjap.32.l1167
Abstract
TiO2 thin films with a relative-dielectric constant of 20 were fabricated by electron cyclotron resonance (ECR) plasma oxidation of Ti thin films without substrate heating. The relative-dielectric constant was found to be constant for film thicknesses from 3.5 to 26 nm, and the maximum capacitance of 37 fF/µm2 was obtained for the thickness of 3.5 nm.Keywords
This publication has 6 references indexed in Scilit:
- Epitaxial Growth of SrTiO3 Films on Pt Electrodes and Their Electrical PropertiesJapanese Journal of Applied Physics, 1992
- Single-Target Sputtring Process for Lead Zirconate Titanate Thin Films with Precise Composition ControlJapanese Journal of Applied Physics, 1991
- SrTiO3 Thin Film Preparation by Ion Beam Sputtering and Its Dielectric PropertiesJapanese Journal of Applied Physics, 1991
- Crown-shaped stacked-capacitor cell for 1.5-V operation 64-Mb DRAMsIEEE Transactions on Electron Devices, 1991
- Electronic Properties of the Interface between Si and TiO2 Deposited at Very Low TemperaturesJapanese Journal of Applied Physics, 1986
- Silicon Oxidation in an Oxygen Plasma Excited by MicrowavesJournal of Applied Physics, 1965