Nitrogen bound exciton spectroscopy in GaAs under pressure
- 1 April 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (4) , 235-236
- https://doi.org/10.1088/0268-1242/4/4/010
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Optical spectroscopy at cryogenic temperatures using a Block–Piermarini diamond-anvil cellReview of Scientific Instruments, 1988
- High pressure dependence of the electronic properties of bound states in n-type GaAsSolid State Communications, 1986
- Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs1−xPx:NPhysica Status Solidi (b), 1984
- Growth of dislocation-free GaAs crystals by nitrogen dopingJournal of Crystal Growth, 1982
- Nitrogen isoelectronic trap in : II. Model calculation of the electronic states and at low temperaturePhysical Review B, 1977
- Nitrogen trap bound states in In1−xGaxPSolid State Communications, 1976