Frequency multiplier measurements on heterostructure barrier varactors on a copper substrate
- 1 May 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (5) , 206-208
- https://doi.org/10.1109/55.841297
Abstract
We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an InP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 /spl mu/A//spl mu/m/sup 2/ at 19 V. The maximum capacitance is 0.54 fF//spl mu/m/sup 2/. In a frequency tripler experiment a maximum output power of 7.1 mW was generated at 221 GHz with a flange-to-flange efficiency of 7.9%.Keywords
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